Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5370201 | Applied Surface Science | 2006 | 6 Pages |
Abstract
The positive secondary ion yields of B+ (dopant), Si+ and Ge+ were measured for Si1âxGex (0 â¤Â x â¤Â 1) sputtered by 5.5 keV 16O2+ and 18O2+. It is found that the useful yields of Ge+ and B+ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of 18O by nuclear resonant reaction analysis (NRA: 18O(p,α)15N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B+, Si+ and Ge+ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O2+ irradiation.
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Authors
A. Mikami, T. Okazawa, K. Saito, Y. Kido,