| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5370227 | Applied Surface Science | 2006 | 4 Pages |
Abstract
Photoluminescence (PL) measurements of the GaMnAs layers embedded with MnAs clusters have been performed. It was shown that the presence of MnAs clusters in the semiconducting matrix leads to appearance in the PL spectra a broad peak with local maximums at 1.36 and 1.33Â eV, which are related with the defects generated in the phase separation process. The effect of the MnAs clusters on the temperature dependent band gap of GaMnAs was also observed.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
P.B. Parchinskiy, Fu Cheng Yu, Se Young Jeong, Cunxu Gao, Dojin Kim, Hyojin Kim, Young Eon Ihm,