Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5370281 | Applied Surface Science | 2006 | 4 Pages |
Abstract
The influence of H2 plasma treatment on the field emission properties of amorphous GaN (a-GaN) films is studied. It is found that the treatment makes little change to the surface morphology. The current density of the treated film decreases from 400 to 30 μA/cm2 at the applied field of about 30 V/μm. The treatment can reduce the defects in a-GaN films, and therefore the treatment results in the weakening of the tunneling emission of the a-GaN film at the high field region. The treatment also seems to change the conduction mechanism of the a-GaN film.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F. Ye, E.Q. Xie, H.G. Duan, H. Li, X.J. Pan,