Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5370400 | Applied Surface Science | 2006 | 4 Pages |
Abstract
ZnO thin films have been grown on a-plane (1,1,â2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at low substrate temperature of 350 °C. It is showed that the crystal and electrical quality of the thin films was improved by using a ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate temperature have a strong UV emission.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
W.Z. Xu, Z.Z. Ye, L. Jiang, Y.J. Zeng, L.P. Zhu, B.H. Zhao,