Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5370416 | Applied Surface Science | 2006 | 8 Pages |
Abstract
The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120Â fs pulses at 800Â nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23Â mJ/cm2, respectively.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Guangjun Zhang, Donghong Gu, Xiongwei Jiang, Qingxi Chen, Fuxi Gan,