Improvement of photoluminescence properties of porous silicon by silica passivation

Porous silicon (PS) was passivated by silica film using a sol-gel method; the photoluminescence (PL) properties were significantly improved; namely, PL intensity and stability increased and PL peak shifted to shorter wavelength. Scanning electron microscope (SEM) and Fourier transformed infrared spectroscope (FTIR) results indicated that silica passivation produced a compact film on the PS surface and modified the surface state of PS. The number of stable surface bonds (HSiO3, HSiSiO2 and H2SiO2) increased due to the oxidation of SiH back-bonds during the gelation process, and thus the PL intensity and stability were improved. Moreover, the blue-shift of PL peak was determined due to the increase in the ratio of SiO/SiH.