| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5370479 | Applied Surface Science | 2005 | 8 Pages |
Abstract
Indium nitrate and thiourea were used as the precursor solutions for preparing indium sulfide thin films using Chemical Spray Pyrolysis (CSP) technique. Films having various In/S ratios were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), optical absorption, transmission and photosensitivity measurements. Sample having In/S ratio 2/3 showed better crystallinity with band gap 2.66Â eV. Depth profile of the sample also indicated the formation of indium sulfide. It was also observed that In/S ratio in the initial precursor solution determined the composition as well as electrical properties of the films. Maximum photosensitivity was observed for the sample prepared using solution having In/S ratio 2/4.
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Authors
Teny Theresa John, C. Sudha Kartha, K.P. Vijayakumar, T. Abe, Y. Kashiwaba,