Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5372683 | Chemical Physics | 2017 | 5 Pages |
â¢The peak positions of total AC shift to the red with decreasing magnitude with ILF.â¢As ILF increases, RIC shifts to the red with decreasing magnitude.â¢The separation between ground and first excited energy levels decreases by the increase of the laser field intensity.
In this paper, we have investigated the effects of the non-resonant intense laser field on the electronic and optical properties such as linear, nonlinear and the total optical absorption coefficient and refractive index change for transitions between two lower-lying electronic states in the GaAs-based δ-doped quantum well. Within the effective mass approximation, we calculated the eigenvalues and corresponding eigenfunctions as a function of the intense laser parameter by solving the Schrödinger equation in the laser-dressed confinement potential. The analytical expressions of the linear and third-order non-linear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The obtained results show that the separation between ground and first excited energy levels in the δ-doped quantum well decreases in energy by the increase of the laser field intensity and this effect leads to an optical red-shift in the intersubband transitions. This behavior gives us a new degree of freedom in tunability of different device applications based on the optical transitions.