Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

•We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy.•We fit photobleaching and photoinduced absorption features at all time delays.•Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives.•Fast non-radiative recombination and slower hole trapping processes are extracted.•A potential approach to unveil ultrafast non-radiative recombination processes.

In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

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