| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5374624 | Chemical Physics | 2012 | 4 Pages |
Abstract
⺠The improved technique of the fractional TSL registration has been elaborated. ⺠The discrete energies of the charge carrier traps were observed for the PDHS film. ⺠The TSL activation energies correlate with the Raman Ag modes of the silicon chain. ⺠The width of TSL curve is generally due to the frequency factor dispersion.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Gumenyuk, N. Ostapenko, Yu. Ostapenko, O. Kerita, S. Suto,