Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5378873 | Chemical Physics Letters | 2016 | 5 Pages |
Abstract
For two-bilayer GaN nanosheets with fluorination on one-side Ga atoms, the band gaps in spin-up and spin-down states as a function of biaxial strain ε. Here ε is defined as ε = (a â a0)/a0, where a0 and a are the lattice constants of systems without and with strain, respectively. The atomic structures with ferromagnetic states (a) in top view and (b) in side view at ε = 0, (c) in side view at ε = +26% are given in the inserts.104
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Authors
Meixia Xiao, Zhimin Ao, Tianhan Xu, Cheng He, Haiyang Song, Lei Wang,