| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5378977 | Chemical Physics Letters | 2016 | 4 Pages |
Abstract
An improvement of memory resistive switching and threshold resistive switching in BiFeO3 films using NiO as a buffer layer.106
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jinming Luo, Haining Zhang, Shuhan Chen, Xiaodong Yang, Shouliang Bu, Jianping Wen,