Distribution of 28Si, 29Si and 30Si isotopes in subsurface layers of Si:B single crystals under plastic deformation

Deformation of Si-B single crystals results in broadening of 29Si and 28Si nuclei distribution in the surface and subsurface layers of the crystal. Dependences of 28Si, 29Si, 30Si concentration f on ionic etching depth x: left: in non-deformed Si-B single crystals (dislocation density ∼1 cm−2) with isotope concentration 6.3% of 28Si, 69.3% of 29Si and 24.3% of 30Si; right: in Si-B single crystals, deformed by three-point bending during 1 h at 950 °C to ∼2 × 107 cm−2 dislocation density determined by chemical etching.