| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5379437 | Chemical Physics Letters | 2016 | 5 Pages |
Abstract
â¿¢Ho3+/Yb3+ co-doped CaNb2O6 thin films were deposited on Si(100) substrates by pulsed laser deposition.â¿¢The annealing temperature has a strong effect on the film's structure, morphology, grain size and the upconversion luminescence properties.â¿¢UC emission is composed of the two emission band at 549 and 671Â nm corresponding to the 5F4,5S2 â¿¿5I8 and 5F5â¿¿5I8 transitions of Ho3+ ions in Ho3+/Yb3+ co-doped CaNb2O6.
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Authors
Ning Li, Wei Wang, Pingping Duan, Yinzhen Wang, Xuwei Sun, Juqing Di, Wei Li, Benli Chu, Qinyu He,