| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5379510 | Chemical Physics Letters | 2015 | 5 Pages |
Abstract
In this work, the MoSe2 nanorods were prepared by hydrothermal method. Further, a resistive switching memory device with single MoSe2 nanorods is demonstrated. The device presents stable resistive switching memory behaviors at room temperature.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yongming Yan, Bai Sun, Dejian Ma,