| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5380245 | Chemical Physics Letters | 2014 | 4 Pages |
Abstract
- Defect-induced ferromagnetism was observed in N-implanted GaN films.
- Ga-vacancy contributed ferromagnetism was confirmed by positron spectrum.
- Density functional calculations are in good agreement with experimental results.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Juping Xu, Qiang Li, Wenshuai Zhang, Jiandang Liu, Huaijiang Du, Bangjiao Ye,