| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5381033 | Chemical Physics Letters | 2014 | 25 Pages |
Abstract
Band gap of CdSe nanosheet under symmetrical and asymmetrical strain. A semiconductor-to-metal (S-M) transition is found when symmetrical strain strength reaches 0.1.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Na Chen, Guolong Yu, Xiao Gu, Li Chen, Yiqun Xie, Feng Liu, Feifei Wang, Xiang Ye, Wangzhou Shi,