| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5381860 | Chemical Physics Letters | 2013 | 4 Pages |
Abstract
- High resistivity ZnO:Cu were employed to degrade background electron concentration.
- Hall results show the high resistivity turn into n-type after H incorporation.
- The anneal results showed the hydrogenated ZnO:Cu fail to recover high resistivity.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xin Cai, Hongwei Liang, Yuanda Liu, Rensheng Shen, Xiaochuan Xia, Yang Liu, C.C. Ling, Guotong Du,