| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5382080 | Chemical Physics Letters | 2013 | 7 Pages |
Abstract
⺠Loosely-bound Si cluster forms during rapid cooling of high temperature Si vapors. ⺠Si clusters deform and order spontaneously upon impingement on a substrate. ⺠Si clusters as growth precursors facilitate epitaxy with reduced impact energies.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
L.W. Chen, Y. Shibuta, M. Kambara, T. Yoshida,