| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5382123 | Chemical Physics Letters | 2013 | 6 Pages |
Abstract
- DFT calculations are performed to study oxygen doped SiC NWs.
- The O is more stable (lower formation energy) in a carbon site.
- There is a trend for the impurities migrate to the surface of the NWs.
- The O impurity gives rise to electronic levels within the band gap of the SiC NWs.
- Magnetic moment for O saturating the surface of the NW.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
E.F. Rosso, R.J. Baierle,