| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5382480 | Chemical Physics Letters | 2013 | 4 Pages |
Abstract
⺠Ferromagnetism (FM) of undoped 3C-SiC not changes with increasing Si: C. ⺠FM of V-doped 3C-SiC weakens with increasing Si: C. ⺠FM of 3C-SiC is related with vacancy concentration. ⺠Divacancies rather than carrier concentration plays dominating role in the FM.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hui Wang, Chengfeng Yan, Haikuan Kong, Jianjun Chen, Jun Xin, Erwei Shi,