| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5383045 | Chemical Physics Letters | 2012 | 5 Pages |
Abstract
⺠AR-XPS is used to investigate the interface between Al2O3 and III-V substrates. ⺠No interfacial oxide is observed on InGaAs after anneal under UHV at 600 °C. ⺠A clear difference is reported regarding indium oxidation under vacuum at 400 °C. ⺠Indium hydroxide is formed only on InAs, in contrast with InP and InGaAs. ⺠On InP, a transition from InPOx to POx is observed after anneal at 400 °C.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
E. Martinez, H. Grampeix, O. Desplats, A. Herrera-Gomez, O. Ceballos-Sanchez, J. Guerrero, K. Yckache, F. Martin,