| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5383199 | Chemical Physics Letters | 2012 | 5 Pages |
Abstract
⺠The influence of O2 on the growth of SiC nanowires by CVD was examined. ⺠O2 content is highly related to the crystallization and density of SiC nanowires. ⺠Crystallization of SiC nanowires improved as deposition temperature increased in O2 environments.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yoo Youl Choi, Jun Gyu Kim, Si Jung Park, Doo Jin Choi,