| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5383811 | Chemical Physics Letters | 2011 | 6 Pages |
Abstract
⺠An optimal DFT method for GaN and ZnO. ⺠Correct band gap description of bulk GaN and ZnO semiconductors. ⺠A new localized Ï-like orbital mechanism for band gap narrowing in GaN/ZnO.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hua-Gen Yu,
