| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5383939 | Chemical Physics Letters | 2011 | 4 Pages |
Abstract
⺠Radial growth of the slanted nc-Si columns on sidewalls of the Si nanowires. ⺠Tilt angles of the nc-Si columns are ranging from 38° to 70°. ⺠The estimated growth rate of the nc-Si columns is approximately 2 Ã
/s.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Su Kong Chong, Boon Tong Goh, Zarina Aspanut, Muhamad Rasat Muhamad, Chang Fu Dee, Saadah Abdul Rahman,