| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5384221 | Chemical Physics Letters | 2011 | 4 Pages |
Abstract
⺠The large-scaled SiNWs were fabricated using a wet chemical etching method. ⺠Silicon nanowires characterization was investigated. ⺠The PL mechanism of SiNWs was investigated by the rapid thermal annealing. ⺠A blue shift of the emission peak originally located at 525 nm was observed.
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Authors
Meiguang Zhu, Xuejiao Chen, Zhiliang Wang, Yun Chen, Dianfei Ma, Hui Peng, Jian Zhang,