| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5384765 | Chemical Physics Letters | 2011 | 5 Pages |
Abstract
⺠ZnSe/Ge nanowire heterostructures have been fabricated by one-step thermal evaporation. ⺠A good epitaxial relationship of (1 1 1)ZnSe//(1 1 1)Ge exists in the heterostructures interface. ⺠The experimental evidence suggests that the bi-axial nanowires are formed via co-growth mechanism. ⺠A new mode â¼263 cmâ1 may be originated from the interface of heterostructural nanowires. ⺠The ZnSe/Ge nanowires have potential applications in solar energy conversion and nanodevices.
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Authors
Xiaofeng Xu, Chunrui Wang, Jian Liu, Junshen Cai, Xiaoshuang Chen,