| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5384810 | Chemical Physics Letters | 2010 | 4 Pages |
Abstract
âºThe edge-oxygenated AGNRs exhibit complex metallic energy band. âºMetallic-semiconducting phase transition can be realized by applying electric fields for edge-oxygenated AGNRs. âºBand gap modulation can be realized by different transverse homogeneous electric fields. âºCritical electric field for achieving semiconducting phase decreases as the width of edge-oxygenated AGNRs decreases. âºRange of electric field for semiconducting phase maintained increases as the width of edge-oxygenated AGNRs decreases.
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Authors
X.Y. Hu, H.W. Tian, W.T. Zheng, S.S. Yu, L. Qiao, C.Q. Qu, Q. Jiang,