| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5384869 | Chemical Physics Letters | 2011 | 5 Pages |
Abstract
⺠Transient optical and electrical response during laser-induced crystallization of Ge2Sb2Te5 thin film was compared. ⺠Much little time was needed to reach equilibrium state for electrical resistance than optical reflectivity. ⺠The dependence of crystallization time on laser pulse fluence was given. ⺠A 2-dimensional percolation model can be used to explain the difference between electrical and optical transients.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
Guangfei Liang, Ke Zhang, Fengxiao Zhai, Huan Huang, Yang Wang, Yiqun Wu,