Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5385415 | Chemical Physics Letters | 2010 | 4 Pages |
Abstract
⺠We find out the possible theoretical origin of ferromagnetism in Al-doped 4H-SiC using first-principles methods and verify the experiments' data. ⺠There is no any d electron in Al-doped 4H-SiC and p electrons dominion the ferromagnetism in this system. ⺠Silicon vacancy has high formation energy but it is one of the important factors of the ferromagnetism in Al-doped 4H-SiC.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Lin Yu, Hao Jin, Donghong Liu, Ying Dai, Meng Guo, Baibiao Huang, Zhenkui Zhang,