Article ID Journal Published Year Pages File Type
5385415 Chemical Physics Letters 2010 4 Pages PDF
Abstract
► We find out the possible theoretical origin of ferromagnetism in Al-doped 4H-SiC using first-principles methods and verify the experiments' data. ► There is no any d electron in Al-doped 4H-SiC and p electrons dominion the ferromagnetism in this system. ► Silicon vacancy has high formation energy but it is one of the important factors of the ferromagnetism in Al-doped 4H-SiC.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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