| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5386089 | Chemical Physics Letters | 2010 | 5 Pages |
Abstract
⺠H2 ambient annealing of SiNWs increases core SiNWs thickness and reduces oxygen content from SiNWs/SiO2.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Bhabani S. Swain, Sung S. Lee, Sang H. Lee, Bibhu P. Swain, Nong M. Hwang,