Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5387143 | Chemical Physics Letters | 2008 | 6 Pages |
Abstract
Surface potential of DySi2âx nanowires on Si(0Â 0Â 1) reveals a 0.28 eV higher surface potential for Dy adatoms on Si(0Â 0Â 1) than clean Si (2Â ÃÂ 1).
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Aniketa Shinde, Juexian Cao, Sangyeob Lee, Ruqian Wu, Regina Ragan,