| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5387559 | Chemical Physics Letters | 2008 | 5 Pages |
Abstract
The initial adsorption mechanism of TiCl4 on H/Si(1Â 0Â 0)-2Â ÃÂ 1 surface was theoretically studied. The direct chlorination channel turned out to be kinetically the most favorable on H/Si(1Â 0Â 0)-2Â ÃÂ 1 surface, contrasting to the corresponding reactions on OH/Si(1Â 0Â 0)-2Â ÃÂ 1. Consequently, it would increase the surface Cl/Ti ratio.
Graphical abstractThe main transition state of the direct chlorination reaction on H/Si(1Â 0Â 0)-2Â ÃÂ 1 by TiCl4. It is kinetically the most favorable.Download full-size image
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Manik Kumer Ghosh, Cheol Ho Choi,