Vertically aligned ZnO nanowire arrays on GaN and SiC substrates

Growth of vertically aligned ZnO nanowire arrays has been systematically attempted on a variety of important semiconductor substrates, and excellent results were achieved on SiC and GaN substrates. Statistical techniques were employed to investigate some growth related issues, which are essentially important for reliable nanodevice fabrication. In addition, the growth of nanowalls connecting individual aligned nanowires was discussed and growth mechanism was proposed. These conductive and interconnected nanowalls are indispensable for nanodevices fabricated on nonconductive substrates for serving as a common electrode. Finally, these arrays have been integrated as ultra violet detectors, and good responses were obtained.