| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5387717 | Chemical Physics Letters | 2008 | 4 Pages |
Abstract
In this work, the EPR parameters of antisite defect in GaAs are calculated using DFT and a saturated cluster model.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Marcos C. Esteves, Alexandre B. Rocha, Ney V. Vugman, Carlos E. Bielschowsky,