| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5388496 | Chemical Physics Letters | 2009 | 4 Pages |
Abstract
The evolution of channel region at the gate insulator-active layer interface in pentacene field effect transistors (FETs) was studied by using the electric field induced optical second harmonic generation (EFISHG) measurements.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Eunju Lim, Daisuke Yamada, Martin Weis, Takaaki Manaka, Mitsumasa Iwamoto,