| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5390028 | Chemical Physics Letters | 2006 | 4 Pages |
Abstract
Characterization of [Zn(S,O)/ZnS]/CuInS2 structures by X-ray and UV photoelectron spectroscopy reveals that induced by a heat-treatment the band bending in the CuInS2 absorber increases. This explains the improvement of the open circuit voltage of corresponding solar cell devices.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
![The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing](/preview/png/5390028.png "First Page Preview: The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing")
Authors
M. Bär, A. Ennaoui, J. Klaer, R. Sáez-Araoz, T. Kropp, L. Weinhardt, C. Heske, H.-W. Schock, Ch.-H. Fischer, M.C. Lux-Steiner,