Organic thin-film transistors with submicrometer channel length fabricated by atomic force microscopy lithography

Using atomic force microscopy (AFM) lithography provides a simple and easy technique for fabricating bottom-contact pentacene organic thin-film transistors (OTFTs) with a submicrometer channel length. The channel length formed by the AFM lithography was around 0.9 μm and the variation of channel length remained small over the channel width. The output characteristics of OTFTs showed a typical p-type behavior with a lack of current saturation due to the short channel length of OTFTs. The field-effect carrier mobility, inverse subthreshold swing and ION/IOFF of the OTFTs were 0.23 cm2/V s, 1.2 V/dec and 7 × 105, respectively.