Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5391122 | Chemical Physics Letters | 2006 | 6 Pages |
Abstract
Aluminum nitride (AlN) nanostructures were prepared using thermal chemical vapour deposition process. At growth temperatures of 950 °C, AlN nanotips with apex diameters of 10 nm, base diameters of â¼100 nm, and length of â¼2000 nm were obtained. Whereas when the growth temperature was 1200 °C, we obtained shorter and thicker AlN nanorods. Compelling microscopic evidences were obtained to show that stacked AlN platelets of diminishing size formed the building blocks for the nanotips. A reducing Ehrlich-Schwoebel barrier introduced into a diffusion mediated growth model explains the formation of AlN nanorods at increasing growth temperatures.
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Authors
Shih-Chen Shi, Surojit Chattopadhyay, Chia-Fu Chen, Kuei-Hsien Chen, Li-Chyong Chen,