| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5391665 | Chemical Physics Letters | 2007 | 4 Pages |
Abstract
This Letter is related to the roles of hydrogen and nitrogen in p-type doping of ZnO. Firstly, we introduced the recent progresses in p-type ZnO. Secondly, the experimental processes were illustrated. Thirdly, the electrical properties of ZnO films were investigated. The p-type conductivity was achieved by rapid thermal annealing. The behaviors of hydrogen and nitrogen in the as-grown and annealed ZnO films were systematically studied. Finally we drew the conclusions.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka,