| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5391790 | Chemical Physics Letters | 2007 | 4 Pages |
Abstract
Intermediate Al contents were found to be most important for achieving good p-type ZnO. Carrier mobility was found to decrease with increasing Al content. The dominant DAP band at 3.13Â eV was found to broaden and red-shift in the high-Al-containing samples.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F. Zhuge, L.P. Zhu, Z.Z. Ye, J.G. Lu, H.P. He, B.H. Zhao,