Investigation of RuO2/4H-SiC Schottky diode contacts by deep level transient spectroscopy

The typical DLTS spectra of RuO2/4H-SiC Schottky barrier diodes at initial conditions: reverse bias voltage VR = −1.59 V, filling pulse VF = 0.1 V, filling time tF = 1.5 ms, and rate windows RW = 2/s. Deep energy levels with thermal activation energies of approximately 0.27, 0.45, 0.56, 0.58 and 0.85 eV referenced to the conduction band minimum were revealed.