| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5394760 | Computational and Theoretical Chemistry | 2012 | 8 Pages |
Abstract
⺠H-SiNTs can be constructed by proper assembly of hydrogenated silicon clusters. ⺠The stability and electronic properties of H-SiNTs are systematically studied. ⺠The chemical formulas of H-SiNTs are exact defined for the first time. ⺠H-SiNTS show a large energy gap due to hydrogen passivation. ⺠A direct-indirect-direct band gap transition has been revealed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Lingju Guo, Xiaohong Zheng, Chunsheng Liu, Wanghuai Zhou, Zhi Zeng,