Article ID Journal Published Year Pages File Type
5394998 Computational and Theoretical Chemistry 2011 5 Pages PDF
Abstract
► The ones B and N located at adjacent Si and C sites are most energetically favorable. ► The energetic advantages of BN co-doping may be due to the charge compensation. ► The SWSiCNTs can be modified ranging from semiconductor to conductor through doping. ► The changes of electrical conductivity are dependent on chirality and doping atoms.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
The stability and electronic structures of B or/and N doped SiC nanotubes: A first-principles study
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