Electron impact ionization cross sections of the ground and excited levels of Se3+

Electron impact single ionization cross sections are theoretically investigated from the ionization threshold to 1000 eV for the levels belonging to the ground and two lowest excited configurations of ([Ni])4s24p, 4s4p2, and 4s24d of Se3+ using a detailed level-to-level distorted-wave formalism. The ionization cross sections of the two levels belonging to the configuration of 4s24p are nearly equivalent and so are 4s24d, whereas large difference is found for the eight levels of 4s4p2. The theoretical results are utilized to analyze and interpret a recent experimental measurement for the single-ionization cross section of Se3+ (Alna'washi et al., 2014). The population distributions existed in this experiment are deduced. Except for the levels of the ground configuration, there exist populations from levels of the excited configuration of 4s24d.