| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5395683 | Journal of Electron Spectroscopy and Related Phenomena | 2015 | 4 Pages |
Abstract
LEED and photoemission measurements have been performed on ultrathin NiO films to reinvestigate its surface quality and valence electronic structures, respectively. On Ag(0 0 1) substrate, the best epitaxial order was observed for high temperature deposition with sufficient oxygen flux associated with a post-deposition oxygen annealing. The effect of the substrate vicinity on valence band electronic structure, in case of interfacial NiO layers, has been explained. The variation of Ni 3d to O 2p photoemission cross-section with photon energy (hν) has been demonstrated in this work.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jayanta Das, Krishnakumar S.R. Menon,