| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5395834 | Journal of Electron Spectroscopy and Related Phenomena | 2014 | 4 Pages |
Abstract
The effect of post deposition annealing and Al2O3 interlayer introduced between the film and substrate on the nitrogen content in TiN films in TiN/SiO2/Si structures were studied using near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. It was established that: (i) the structure of the studied films corresponds to TiN1âxOx; (ii) annealing the system insignificantly decreases the concentration of the oxygen in the film; (iii) an Al2O3 interlayer prevents diffusion of oxygen from SiO2 and supports high nitrogen content in the TiN-film.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M.A. Konyushenko, A.S. Konashuk, A.A. Sokolov, F. Schaefers, E.O. Filatova,