| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5396058 | Journal of Electron Spectroscopy and Related Phenomena | 2013 | 7 Pages |
Abstract
Hard X-ray photoemission spectroscopy experiments are attractive because they can probe more deeply. The paper reviews two topics on the non-destructive characterization of high-κ/high-μ gate stacks using hard X-ray (hν = 7.94 keV) photoemission spectroscopy. The first topic is the change in the compositional depth profiles and the chemical bonding states of HfO2/Si-cap/strained-Ge/Si0.5Ge0.5/Si(1 0 0) laminating structures. The second topic is the influence of various surface treatments (HF, (NH4)2S and HMDS treatments) and La2O3 interlayer insertion on the chemical bonding states at high-κ/In0.53Ga0.47As interface.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
H. Nohira, A. Komatsu, K. Yamashita, K. Kakushima, H. Iwai, K. Sawano, Y. Shiraki,