Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5396059 | Journal of Electron Spectroscopy and Related Phenomena | 2013 | 7 Pages |
Abstract
As the device downscaling in nanoelectronics has reached the 10Â nm range, the functionality of materials employed in multilayered structures to be used in future logic and memory devices is largely defined by their interface properties. In particular, the electrical properties of the functional stacks are directly related to the electronic band line-up which is affected by the electric dipoles building up at the interface(s). In this work, hard X-ray photoelectron spectroscopy is applied to probe the electronic conditions at the interfaces of several relevant multilayered functional structures and to correlate the results with their electrical (transport) properties.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
A. Zenkevich, Y. Matveyev, M. Minnekaev, Yu. Lebedinskii, S. Thiess, W. Drube,