| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5396101 | Journal of Electron Spectroscopy and Related Phenomena | 2013 | 5 Pages |
Abstract
The adsorption and reaction of titanium on an oxidized Si(0Â 0Â 1) surface have been investigated using Si 2p, Ti 2p and O 1s core level photoemission measurements at room temperature (RT). We found that titanium adsorption on an oxidized Si(0Â 0Â 1) surface at RT causes a reduction of the intensity of the Si1+ and Si2+ states and an increase of the intensity of the Si3+ and Si4+ states. Based on an analysis of the Ti 2p and O 1s states, we conclude that the change in the Si 2p oxidized state upon titanium adsorption is due to charge transfer rather than conformation change.
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Authors
S. Ohno, S. Abe, K. Takahashi, M. Kamada, M. Tanaka,